Recent Advances in PMOS Negative Bias Temperature Instability: Characterization and Modeling of Device Architecture, Material and Process Impact
Recent Advances in PMOS Negative Bias Temperature Instability explores the characterization and modeling of PMOS device behavior, with attention to the effects of architecture, materials, and processing. This focused technical resource supports readers studying semiconductor reliability, electronic devices, and advances in device technology.
About This Book
This book examines recent advances in PMOS negative bias temperature instability, a topic in semiconductor device reliability.
It focuses on the characterization and modeling of this phenomenon across device architecture, material, and process considerations.
The work is intended for readers seeking a technical understanding of how these factors relate to PMOS behavior and reliability analysis.
Written by Souvik Mahapatra, it presents a focused resource for study and research in electronic devices and semiconductor technology.
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